Vishay SISS10DN-T1-GE3 MOSFETs
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212-S EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS10DN-T1-GE3
Detailed Description
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212-S EP T/R
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISS10DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISS10DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
2.65 mOhms
Alternate Parts Comparison (SISS10DN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3 vs SIS782DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 7 ns | -- | -- | -- |
| ID Continuous Drain Current | 60 A | -- | -- | -- |
| Pd Power Dissipation | 57 W | -- | -- | -- |
| Qg Gate Charge | 75 nC | -- | -- | -- |
| Action |
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