Vishay SQ7414CENW-T1_GE3 MOSFETs
Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ7414CENW-T1_GE3
Detailed Description
Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK® 1212-8W
Lifecycle Status
Active
Datasheet
SQ7414CENW-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQ7414CENW-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Compliant
Number of Pins
5
Number of Channels
1
Package / Case
PowerPAK® 1212-8W
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
18 A
Current Continuous Drain ID 25 C
18A (Tc)
Alternate Parts Comparison (SQ7414CENW-T1_GE3 vs SQS840CENW-T1_GE3 vs SQS486CENW-T1_GE3 vs SQJ872EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | TrenchFET® Gen IV | SQ |
| Package / Case | PowerPAK® 1212-8W | PowerPAK® 1212-8W | PowerPAK® 1212-8W | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant | ROHS3 Compliant | ROHS3 Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 18A (Tc) | 12A (Tc) | 18A (Tc) | 24.5A (Tc) |
| Drain to Source Voltage Vdss | 60 V | 40 V | 40 V | 150 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 7.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 25 nC @ 10 V | 22.5 nC @ 10 V | 53 nC @ 10 V | 22 nC @ 10 V |
| Action |
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Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
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SQS482ENW-T1_GE3VishayPower Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
