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Vishay SQS486CENW-T1_GE3 MOSFETs

AUTOMOTIVE N-CHANNEL 40 V (D-S)

30 ActiveVishayPowerPAK® 1212-8W$0.96
SQS486CENW-T1_GE3 PowerPAK® 1212-8W package illustration

Same model may have multiple batches, images only for reference.

SQS486CENW-T1_GE3
Manufacturer
Part Number (MPN)
SQS486CENW-T1_GE3
Detailed Description
AUTOMOTIVE N-CHANNEL 40 V (D-S)
Package
PowerPAK® 1212-8W
Lifecycle Status
Active
Datasheet
PDF SQS486CENW-T1_GE3 Datasheet
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Technical Specifications

Vishay SQS486CENW-T1_GE3 MOSFETs technical specifications.

General

Series
TrenchFET® Gen IV
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK® 1212-8W
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Current Continuous Drain ID 25 C
18A (Tc)

Alternate Parts Comparison (SQS486CENW-T1_GE3 vs SQS482ENW-T1_GE3 vs SQS484EN-T1-GE3 vs SQS966ENW-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET® Gen IVAutomotive, AEC-Q101, TrenchFET®TrenchFET?SQS
Package / CasePowerPAK® 1212-8WPowerPAK® 1212-8WReelTape and Reel
Mounting TypeSurface MountSurface MountSMD/SMTSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C18A (Tc)16A (Tc)16A (Tc)6A (Tc)
Drain to Source Voltage Vdss40 V30 V40 V60 V
Fet TypeN-ChannelN-ChannelMOSFET N-Channel, Metal Oxide2 N-Channel (Dual)
Gate Charge Qg Max Vgs53 nC @ 10 V39 nC @ 10 V39 nC @ 10 V8.8nC @ 10V
Input Capacitance Ciss Max Vds2950 pF @ 25 V1865 pF @ 25 V1855 pF @ 25 V572pF @ 25V
Rds on Max ID Vgs5.1mOhm @ 10A, 10V8.5mOhm @ 16.4A, 10V9 mOhm @ 16.4A, 10V36mOhm @ 1.25A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Si
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