Vishay SQS840CENW-T1_GE3 MOSFETs
MOSFET N-CH 40V 12A PPAK 1212-8W
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQS840CENW-T1_GE3
Detailed Description
MOSFET N-CH 40V 12A PPAK 1212-8W
Package
PowerPAK® 1212-8W
Lifecycle Status
Active
Datasheet
SQS840CENW-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQS840CENW-T1_GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK® 1212-8W
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Current Continuous Drain ID 25 C
12A (Tc)
Alternate Parts Comparison (SQS840CENW-T1_GE3 vs SQS482ENW-T1_GE3 vs SQS484EN-T1-GE3 vs SQS966ENW-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | TrenchFET? | SQS |
| Package / Case | PowerPAK® 1212-8W | PowerPAK® 1212-8W | Reel | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | SMD/SMT | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 12A (Tc) | 16A (Tc) | 16A (Tc) | 6A (Tc) |
| Drain to Source Voltage Vdss | 40 V | 30 V | 40 V | 60 V |
| Fet Type | N-Channel | N-Channel | MOSFET N-Channel, Metal Oxide | 2 N-Channel (Dual) |
| Gate Charge Qg Max Vgs | 22.5 nC @ 10 V | 39 nC @ 10 V | 39 nC @ 10 V | 8.8nC @ 10V |
| Input Capacitance Ciss Max Vds | 1031 pF @ 20 V | 1865 pF @ 25 V | 1855 pF @ 25 V | 572pF @ 25V |
| Rds on Max ID Vgs | 20mOhm @ 7.5A, 10V | 8.5mOhm @ 16.4A, 10V | 9 mOhm @ 16.4A, 10V | 36mOhm @ 1.25A, 10V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Action |
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