Vishay TP0610K-T1-GE3 MOSFETs
P-CH JFET, -60V, -185mA, SOT-23-3, 10R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TP0610K-T1-GE3
Base Model
Detailed Description
P-CH JFET, -60V, -185mA, SOT-23-3, 10R
Package
SOT-23-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay TP0610K-T1-GE3 MOSFETs technical specifications.
General
Series
TP0
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
185 mA
Rds on Drain Source Resistance
6 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (TP0610K-T1-GE3 vs TP0610K-T1-E3 vs TPSMP36AHM3_A/H vs TPSMP39AHM3_A/H)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Series | TP0 | TP0 | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Forward Transconductance Min | 80 mS | 80 mS | -- | -- |
| ID Continuous Drain Current | 185 mA | 185 mA | -- | -- |
| Maximum Operating Temperature C | + 150 | + 150 | -- | -- |
| Minimum Operating Temperature C | - 55 | - 55 | -- | -- |
| Package | SOT23-3 | SOT23-3 | -- | -- |
| Pd Power Dissipation | 350 mW | 350 mW | -- | -- |
| Action |
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