Vishay SQS482ENW-T1_GE3 MOSFETs
Power Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQS482ENW-T1_GE3
Detailed Description
Power Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK® 1212-8W
Lifecycle Status
Active
Datasheet
SQS482ENW-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQS482ENW-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
Number of Pins
5
Package / Case
PowerPAK® 1212-8W
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
16A (Tc)
Drain to Source Voltage Vdss
30 V
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Fet Type
N-Channel
Alternate Parts Comparison (SQS482ENW-T1_GE3 vs SQS966ENW-T1_GE3 vs SQS840EN-T1_GE3 vs SQS420EN-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | SQS | TrenchFET® | SQS |
| Package / Case | PowerPAK® 1212-8W | Tape and Reel | PowerPAK® 1212-8 | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 16A (Tc) | 6A (Tc) | 12A (Tc) | 8A (Tc) |
| Drain to Source Voltage Vdss | 30 V | 60 V | 40 V | 20 V |
| Fet Type | N-Channel | 2 N-Channel (Dual) | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 39 nC @ 10 V | 8.8nC @ 10V | 22.5 nC @ 10 V | 14 nC @ 4.5 V |
| Input Capacitance Ciss Max Vds | 1865 pF @ 25 V | 572pF @ 25V | 1031 pF @ 20 V | 490 pF @ 10 V |
| Rds on Max ID Vgs | 8.5mOhm @ 16.4A, 10V | 36mOhm @ 1.25A, 10V | 20mOhm @ 7.5A, 10V | 28mOhm @ 5A, 4.5V |
| Technology | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) | Si |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SQS415ENW-T1_GE3VishayPower Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
SQ7414CENW-T1_GE3VishayPower Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
