Toshiba MT3S20P(TE12L,F) RF BJT
MT3S20P(TE12L,F) by Toshiba · RF BJT · TO-243AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S20P(TE12L,F)
Package
TO-243AA
Lifecycle Status
Obsolete
Datasheet
MT3S20P(TE12L,F) Datasheet
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Technical Specifications
Toshiba MT3S20P(TE12L,F) RF BJT technical specifications.
General
RoHS
RoHS Compliant
Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
12 V
Current Collector IC Max
80 mA
Dc Current Gain Hfe Min IC Vce
100 @ 50mA, 5V
Frequency Transition
7 GHz
Gain
16.5dB
Related Parts Comparison (MT3S20P(TE12L,F) vs MT3S20TU(TE85L) vs MT3S16U(TE85L,F) vs MT3S111(TE85L,F))
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Mounting Type | Surface Mount | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | 150°C (TJ) | -- | - 55°C ~ + 125°C | + 150°C |
| Transistor Type | NPN | -- | Bipolar | Bipolar |
| Package | -- | UFM-3 | SC-70-3 | S-Mini |
| Action |
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