Toshiba MT3S16U(TE85L,F) RF BJT
MT3S16U(TE85L,F) by Toshiba · RF BJT · SC-70-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S16U(TE85L,F)
Package
SC-70-3
Lifecycle Status
Active
Datasheet
MT3S16U(TE85L,F) Datasheet
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Technical Specifications
Toshiba MT3S16U(TE85L,F) RF BJT technical specifications.
General
Series
MT3S16
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 125°C
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
Operating Frequency
4 GHz
Dc Collector Base Gain Hfe Min
80
Collector Emitter Voltage Vceo Max
5 V
Alternate Parts Comparison (MT3S16U(TE85L,F) vs MT3S111TU,LF vs MT3S20P(TE12L,F) vs MT4S300U(TE85L,O,F)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 125°C | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | ROHS3 Compliant | RoHS Compliant | ROHS3 Compliant |
| Transistor Type | Bipolar | NPN | NPN | NPN |
| Package / Case | -- | 3-SMD, Flat Lead | TO-243AA | SC-82A, SOT-343 |
| Lifecycle Status | -- | Active | Obsolete | Active |
| Current Collector IC Max | -- | 100 mA | 80 mA | 50 mA |
| Dc Current Gain Hfe Min IC Vce | -- | 200 @ 30mA, 5V | 100 @ 50mA, 5V | 200 @ 10mA, 3V |
| Frequency Transition | -- | 10 GHz | 7 GHz | 26.5 GHz |
| Gain | -- | 12.5dB | 16.5dB | 16.9dB |
| Noise Figure Db Typ F | -- | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz | 1.45dB @ 1GHz | 0.55dB @ 2GHz |
| Power Max | -- | 800 mW | 1.8 W | 250 mW |
| Action |
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