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Toshiba 2SC5066-O,LF RF BJT

2SC5066-O,LF by Toshiba · RF BJT · SC-75, SOT-416

In StockToshibaSC-75, SOT-416
2SC5066-O,LF SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

2SC5066-O,LF
Manufacturer
Part Number (MPN)
2SC5066-O,LF
Package
SC-75, SOT-416
Lifecycle Status
Obsolete
Datasheet
PDF 2SC5066-O,LF Datasheet
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Technical Specifications

Toshiba 2SC5066-O,LF RF BJT technical specifications.

General

RoHS
RoHS Compliant
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Frequency Transition
7 GHz
Moisture Sensitivity Level MSL
1 (Unlimited)
Noise Figure Db Typ F
1dB @ 500MHz

Related Parts Comparison (2SC5066-O,LF vs 2SC5087R(TE85L,F) vs MT3S113(TE85L,F) vs 2SC5065-O(TE85L,F))

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSMD/SMTSMD/SMT
Operating Temperature125°C (TJ)- 55°C ~ + 125°C+ 150°C- 55°C ~ + 125°C
RoHSRoHS CompliantYesYesYes
Transistor TypeNPNBipolarBipolar--
Collector Emitter Voltage Vceo Max--12 V5.3 V12 V
Configuration--SingleSingleSingle
Continuous Collector Current--80 mA100 mA30 mA
Dc Collector Base Gain Hfe Min--12020080
Emitter Base Voltage Vebo--3 V600 mV3 V
Package--SMQ-4S-MiniSC-70-3
Pd Power Dissipation--150 mW800 mW100 mW
Technology--SiSiGeSi
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