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Toshiba 2SC5095-R(TE85L,F) RF BJT

2SC5095-R(TE85L,F) by Toshiba · RF BJT · SC-70, SOT-323

In StockToshibaSC-70, SOT-323
2SC5095-R(TE85L,F) SC-70, SOT-323 package illustration

Same model may have multiple batches, images only for reference.

2SC5095-R(TE85L,F)
Manufacturer
Part Number (MPN)
2SC5095-R(TE85L,F)
Package
SC-70, SOT-323
Lifecycle Status
Obsolete
Datasheet
PDF 2SC5095-R(TE85L,F) Datasheet
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Technical Specifications

Toshiba 2SC5095-R(TE85L,F) RF BJT technical specifications.

General

Series
2SC5095
RoHS
Compliant
Number of Pins
3
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Obsolete
Automotive
No
Collector Base Voltage Vcbo
20 V
Collector Emitter Voltage Vceo Max
10 V

Alternate Parts Comparison (2SC5095-R(TE85L,F) vs 2SC5066-Y,LF vs 2SC5095-O(TE85L,F) vs 2SC5065-Y(TE85L,F))

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSMD (SMT)Surface MountSurface Mount
RoHSCompliantCompliantYesYes
Frequency Transition10 GHz7 GHz10GHz7GHz
Noise Figure Db Typ F1.8dB @ 2GHz1dB @ 500MHz1.8dB @ 2GHz1.1dB @ 1GHz
Operating Temperature125°C (TJ)--125°C (TJ)125°C (TJ)
Lifecycle StatusObsolete--ObsoleteActive
Current Collector IC Max15 mA--15mA30mA
Dc Current Gain Hfe Min IC Vce50 @ 7mA, 6V--80 @ 7mA, 6V120 @ 10mA, 5V
Gain13dB ~ 7.5dB--13dB ~ 7dB12dB ~ 17dB
Power Max100 mW--100mW100mW
Transistor TypeNPN--NPNNPN
Voltage Collector Emitter Breakdown Max10 V--10V12V
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