Toshiba MT3S113P(TE12L,F) RF BJT
MT3S113P(TE12L,F) by Toshiba · RF BJT · TO-243AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S113P(TE12L,F)
Package
TO-243AA
Lifecycle Status
Active
Datasheet
MT3S113P(TE12L,F) Datasheet
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Technical Specifications
Toshiba MT3S113P(TE12L,F) RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
5.3V
Frequency Transition
7.7GHz
Noise Figure Db Typ F
1.45dB @ 1GHz
Gain
10.5dB
Power Max
1.6W
Alternate Parts Comparison (MT3S113P(TE12L,F) vs MT3S20TU(TE85L) vs MT3S16U(TE85L,F) vs MT3S111(TE85L,F))
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-243AA | UFM-3 | SC-70-3 | S-Mini |
| Mounting Type | Surface Mount | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | 150°C (TJ) | -- | - 55°C ~ + 125°C | + 150°C |
| Transistor Type | NPN | -- | Bipolar | Bipolar |
| Action |
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