Toshiba MT3S113P(TE12L,F) RF BJT
MT3S113P(TE12L,F) by Toshiba · RF BJT · TO-243AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S113P(TE12L,F)
Package
TO-243AA
Lifecycle Status
Active
Datasheet
MT3S113P(TE12L,F) Datasheet
Quick Jump:
Technical Specifications
Toshiba MT3S113P(TE12L,F) RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
5.3V
Frequency Transition
7.7GHz
Noise Figure Db Typ F
1.45dB @ 1GHz
Gain
10.5dB
Power Max
1.6W
Related Parts Comparison (MT3S113P(TE12L,F) vs MT3S20TU(TE85L) vs MT3S16U(TE85L,F) vs MT3S111(TE85L,F))
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-243AA | UFM-3 | SC-70-3 | S-Mini |
| Mounting Type | Surface Mount | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | 150°C (TJ) | -- | - 55°C ~ + 125°C | + 150°C |
| Transistor Type | NPN | -- | Bipolar | Bipolar |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
