Toshiba MT3S113(TE85L,F) RF BJT
MT3S113(TE85L,F) by Toshiba · RF BJT · S-Mini
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S113(TE85L,F)
Package
S-Mini
Lifecycle Status
Active
Datasheet
MT3S113(TE85L,F) Datasheet
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Technical Specifications
Toshiba MT3S113(TE85L,F) RF BJT technical specifications.
General
Series
MT3S113
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Transistor Type
Bipolar
Technology
SiGe
Transistor Polarity
NPN
Operating Frequency
12.5 GHz
Dc Collector Base Gain Hfe Min
200
Collector Emitter Voltage Vceo Max
5.3 V
Alternate Parts Comparison (MT3S113(TE85L,F) vs MT3S20TU(TE85L) vs MT3S20P(TE12L,F) vs MT3S111TU,LF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | RoHS Compliant | ROHS3 Compliant |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Operating Temperature | + 150°C | -- | 150°C (TJ) | 150°C (TJ) |
| Transistor Type | Bipolar | -- | NPN | NPN |
| Package | S-Mini | UFM-3 | -- | -- |
| Series | MT3S113 | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 5.3 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current | 100 mA | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 200 | -- | -- | -- |
| Emitter Base Voltage Vebo | 600 mV | -- | -- | -- |
| Maximum Dc Collector Current | 100 mA | -- | -- | -- |
| Action |
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