Toshiba 2SC5065-O(TE85L,F) RF BJT
2SC5065-O(TE85L,F) by Toshiba · RF BJT · SC-70-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5065-O(TE85L,F)
Package
SC-70-3
Lifecycle Status
Active
Datasheet
2SC5065-O(TE85L,F) Datasheet
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Technical Specifications
Toshiba 2SC5065-O(TE85L,F) RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 125°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
12 V
Collector Base Voltage Vcbo
20 V
Emitter Base Voltage Vebo
3 V
Maximum Dc Collector Current
30 mA
Pd Power Dissipation
100 mW
Alternate Parts Comparison (2SC5065-O(TE85L,F) vs 2SC5088-O(TE85L,F) vs 2SC5066-Y,LF vs 2SC5108-Y,LF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD (SMT) | Surface Mount |
| RoHS | Yes | -- | Compliant | RoHS Compliant |
| Operating Temperature | - 55°C ~ + 125°C | 125°C (TJ) | -- | -- |
| Technology | Si | -- | -- | Si |
| Transistor Polarity | NPN | -- | NPN | -- |
| Collector Base Voltage Vcbo | 20 V | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 12 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current | 30 mA | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 80 | -- | -- | -- |
| Dc Current Gain Hfe Max | 240 | -- | -- | -- |
| Emitter Base Voltage Vebo | 3 V | -- | -- | -- |
| Action |
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