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Toshiba 2SC5088-O(TE85L,F) RF BJT

2SC5088-O(TE85L,F) by Toshiba · RF BJT · SC-82A, SOT-343

In StockToshibaSC-82A, SOT-343
2SC5088-O(TE85L,F) SC-82A, SOT-343 package illustration

Same model may have multiple batches, images only for reference.

2SC5088-O(TE85L,F)
Manufacturer
Part Number (MPN)
2SC5088-O(TE85L,F)
Package
SC-82A, SOT-343
Lifecycle Status
Obsolete
Datasheet
PDF 2SC5088-O(TE85L,F) Datasheet
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Technical Specifications

Toshiba 2SC5088-O(TE85L,F) RF BJT technical specifications.

General

Package / Case
SC-82A, SOT-343
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
80 mA
Dc Current Gain Hfe Min IC Vce
80 @ 20mA, 10V
Frequency Transition
7 GHz
Gain
18dB
Moisture Sensitivity Level MSL
1 (Unlimited)
Noise Figure Db Typ F
1dB @ 500MHz

Alternate Parts Comparison (2SC5088-O(TE85L,F) vs 2SC5065-O(TE85L,F) vs 2SC4215-O(TE85L,F) vs 2SC5087R(TE85L,F))

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSMD/SMTSMD/SMTSMD/SMT
Operating Temperature125°C (TJ)- 55°C ~ + 125°C+ 125°C- 55°C ~ + 125°C
Collector Base Voltage Vcbo--20 V40 V20 V
Collector Emitter Voltage Vceo Max--12 V30 V12 V
Configuration--SingleSingleSingle
Emitter Base Voltage Vebo--3 V4 V3 V
Package--SC-70-3SC-70, SOT-323SMQ-4
Pd Power Dissipation--100 mW100 mW150 mW
Technology--SiSiSi
Transistor Polarity--NPNNPNNPN
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