Skip to main content

onsemi MPSH81-D26Z RF BJT

MPSH81-D26Z by onsemi · RF BJT · TO-92-3

In StockonsemiTO-92-3
MPSH81-D26Z TO-92-3 package illustration

Same model may have multiple batches, images only for reference.

MPSH81-D26Z
Manufacturer
Part Number (MPN)
MPSH81-D26Z
Package
TO-92-3
Lifecycle Status
Obsolete
Datasheet
PDF MPSH81-D26Z Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Technical Specifications

onsemi MPSH81-D26Z RF BJT technical specifications.

General

Package / Case
Tape & Reel
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Frequency Transition
600 MHz
Power Max
350 mW
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
20 V

Alternate Parts Comparison (MPSH81-D26Z vs MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTape & ReelTO-226-3, TO-92-3TO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V
Frequency Transition600 MHz800MHz800MHz650MHz
Power Max350 mW350mW350mW350mW
Transistor TypePNPNPNNPNNPN
Voltage Collector Emitter Breakdown Max20 V15V15V25V
Action

More Parts in RF BJT

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.