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onsemi MPSH17-D26Z RF BJT

MPSH17-D26Z by onsemi · RF BJT · TO-92-3

In StockonsemiTO-92-3
MPSH17-D26Z TO-92-3 package illustration

Same model may have multiple batches, images only for reference.

MPSH17-D26Z
Manufacturer
Part Number (MPN)
MPSH17-D26Z
Package
TO-92-3
Lifecycle Status
Obsolete
Datasheet
PDF MPSH17-D26Z Datasheet
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Technical Specifications

onsemi MPSH17-D26Z RF BJT technical specifications.

General

Package / Case
Tape & Reel
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
25 @ 5mA, 10V
Frequency Transition
800 MHz
Gain
24dB
Noise Figure Db Typ F
6dB @ 200MHz
Power Max
350 mW
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15 V

Alternate Parts Comparison (MPSH17-D26Z vs MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTape & ReelTO-226-3, TO-92-3TO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Dc Current Gain Hfe Min IC Vce25 @ 5mA, 10V25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V
Frequency Transition800 MHz800MHz800MHz650MHz
Power Max350 mW350mW350mW350mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max15 V15V15V25V
Gain24dB24dB24dB--
Noise Figure Db Typ F6dB @ 200MHz6dB @ 200MHz6dB @ 200MHz--
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
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