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onsemi MPSH10RLRAG RF BJT

RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)

8,000onsemiTO-226-3, TO-92-3 Long Body, Formed Leads$0.03
MPSH10RLRAG - No Image Available

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MPSH10RLRAG
Manufacturer
Part Number (MPN)
MPSH10RLRAG
Detailed Description
RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body, Formed Leads
Lifecycle Status
Obsolete
Datasheet
PDF MPSH10RLRAG Datasheet
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Technical Specifications

onsemi MPSH10RLRAG RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Power Max
350mW
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Frequency Transition
650MHz
Description
RF TRANS NPN 25V 650MHZ TO-92

Alternate Parts Comparison (MPSH10RLRAG vs MPSH17RLRAG vs MPSH17 vs MPSH10G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3TO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Base Part Number--MPSH17----
Dc Current Gain Hfe Min IC Vce60 @ 4mA, 10V25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V
Detailed DescriptionRF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92-3RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)
Frequency Transition650MHz800MHz800MHz650MHz
Gain--24dB24dB--
Noise Figure Db Typ F--6dB @ 200MHz6dB @ 200MHz--
Power Max350mW350mW350mW350mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max25V15V15V25V
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