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onsemi PN3563-D75Z RF BJT

PN3563-D75Z by onsemi · RF BJT · TO-92-3

In StockonsemiTO-92-3
PN3563-D75Z TO-92-3 package illustration

Same model may have multiple batches, images only for reference.

PN3563-D75Z
Manufacturer
Part Number (MPN)
PN3563-D75Z
Package
TO-92-3
Lifecycle Status
Obsolete
Datasheet
PDF PN3563-D75Z Datasheet
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Technical Specifications

onsemi PN3563-D75Z RF BJT technical specifications.

General

Package / Case
Tape & Box
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
20 @ 8mA, 10V
Frequency Transition
1.5 GHz
Gain
14dB ~ 26dB
Power Max
350 mW
Transistor Type
NPN

Alternate Parts Comparison (PN3563-D75Z vs PN2907ATAR vs PN2907ATFR vs PN2222ABU)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTape & BoxTO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector IC Max50 mA800 mA800 mA1 A
Dc Current Gain Hfe Min IC Vce20 @ 8mA, 10V100 @ 150mA, 10V100 @ 150mA, 10V100 @ 150mA, 10V
Frequency Transition1.5 GHz200MHz200MHz300MHz
Power Max350 mW625 mW625 mW625 mW
Transistor TypeNPNPNPPNPNPN
Voltage Collector Emitter Breakdown Max15 V60 V60 V40 V
Current Collector Cutoff Max--20nA (ICBO)20nA (ICBO)10nA (ICBO)
Package--TO-92-3TO-92-3TO-92-3
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