Skip to main content

onsemi MPSH17RLRAG RF BJT

RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92-3

20,220 ActiveonsemiTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)$1.16RoHS
MPSH17RLRAG TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package illustration

Same model may have multiple batches, images only for reference.

MPSH17RLRAG
Manufacturer
Part Number (MPN)
MPSH17RLRAG
Detailed Description
TRANS NPN RF CATV BIPO 15V TO-92
Package
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MPSH17RLRAG Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Technical Specifications

onsemi MPSH17RLRAG RF BJT technical specifications.

General

RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Voltage Collector Emitter Breakdown Max
15V
Transistor Type
NPN
Power Max
350mW
Noise Figure Db Typ F
6dB @ 200MHz
Gain
24dB

Alternate Parts Comparison (MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG vs MPSH10G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3 Long Body
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Dc Current Gain Hfe Min IC Vce25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V60 @ 4mA, 10V
Frequency Transition800MHz800MHz650MHz650MHz
Power Max350mW350mW350mW350mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max15V15V25V25V
Action

More Parts in RF BJT

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.