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onsemi MPSH17 RF BJT

RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)

20,000onsemiTO-226-3, TO-92-3 Long Body$0.15
MPSH17 - No Image Available

Same model may have multiple batches, images only for reference.

MPSH17
Manufacturer
Part Number (MPN)
MPSH17
Detailed Description
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body
Lifecycle Status
Obsolete
Datasheet
PDF MPSH17 Datasheet
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Technical Specifications

onsemi MPSH17 RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3 Long Body
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Gain
24dB
Power Max
350mW
Dc Current Gain Hfe Min IC Vce
25 @ 5mA, 10V
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
800MHz

Alternate Parts Comparison (MPSH17 vs MPSH17RLRAG vs MPSH10RLRAG vs MPSH10G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3TO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3 Long Body
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Base Part Number--MPSH17----
Dc Current Gain Hfe Min IC Vce25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V60 @ 4mA, 10V
Detailed DescriptionRF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92-3RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)
Frequency Transition800MHz800MHz650MHz650MHz
Gain24dB24dB----
Noise Figure Db Typ F6dB @ 200MHz6dB @ 200MHz----
Power Max350mW350mW350mW350mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max15V15V25V25V
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