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onsemi BF199-J35Z RF BJT

BF199-J35Z by onsemi · RF BJT · TO-92-3

In StockonsemiTO-92-3
BF199-J35Z TO-92-3 package illustration

Same model may have multiple batches, images only for reference.

BF199-J35Z
Manufacturer
Part Number (MPN)
BF199-J35Z
Package
TO-92-3
Lifecycle Status
Obsolete
Datasheet
PDF BF199-J35Z Datasheet
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Technical Specifications

onsemi BF199-J35Z RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
38 @ 7mA, 10V
Frequency Transition
1.1 GHz
Power Max
350 mW
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25 V

Alternate Parts Comparison (BF199-J35Z vs BF720T1G vs BF959G vs BF959ZL1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkTO-261-4, TO-261AATO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough HoleSurface MountThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveObsoleteObsolete
Current Collector IC Max50 mA100 mA100mA100mA
Dc Current Gain Hfe Min IC Vce38 @ 7mA, 10V50 @ 25mA, 20V40 @ 20mA, 10V40 @ 20mA, 10V
Frequency Transition1.1 GHz60MHz700MHz700MHz
Power Max350 mW1.5 W625mW625mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max25 V300 V20V20V
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