onsemi BF494-D27Z RF BJT
BF494-D27Z by onsemi · RF BJT · TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BF494-D27Z
Package
TO-92-3
Lifecycle Status
Obsolete
Datasheet
BF494-D27Z Datasheet
Quick Jump:
Technical Specifications
onsemi BF494-D27Z RF BJT technical specifications.
General
Package / Case
Tape & Reel
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
67 @ 1mA, 10V
Power Max
350 mW
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
20 V
Alternate Parts Comparison (BF494-D27Z vs BF199-D74Z vs BF199-J35Z vs BF494-D74Z)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Tape & Reel | Tape & Box | Bulk | Tape & Box |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 30 mA | 50 mA | 50 mA | 30 mA |
| Dc Current Gain Hfe Min IC Vce | 67 @ 1mA, 10V | 38 @ 7mA, 10V | 38 @ 7mA, 10V | 67 @ 1mA, 10V |
| Power Max | 350 mW | 350 mW | 350 mW | 350 mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 20 V | 25 V | 25 V | 20 V |
| Action |
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