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onsemi MPSH81 RF BJT

RF Transistor PNP 20V 50mA 600MHz 350mW Through Hole TO-92-3

In StockonsemiTO-226-3, TO-92-3 (TO-226AA)
MPSH81 - No Image Available

Same model may have multiple batches, images only for reference.

MPSH81
Manufacturer
Part Number (MPN)
MPSH81
Detailed Description
RF Transistor PNP 20V 50mA 600MHz 350mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
PDF MPSH81 Datasheet
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Technical Specifications

onsemi MPSH81 RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Description
RF TRANS PNP 20V 600MHZ TO-92-3
Detailed Description
RF Transistor PNP 20V 50mA 600MHz 350mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Current Collector IC Max
50mA
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
20V

Alternate Parts Comparison (MPSH81 vs MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-3 Long BodyTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Base Part Number--MPSH17----
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V25 @ 5mA, 10V25 @ 5mA, 10V60 @ 4mA, 10V
Detailed DescriptionRF Transistor PNP 20V 50mA 600MHz 350mW Through Hole TO-92-3RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92-3RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)
Frequency Transition600MHz800MHz800MHz650MHz
Gain--24dB24dB--
Noise Figure Db Typ F--6dB @ 200MHz6dB @ 200MHz--
Power Max350mW350mW350mW350mW
Transistor TypePNPNPNNPNNPN
Voltage Collector Emitter Breakdown Max20V15V15V25V
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