onsemi SS9018GBU RF BJT
RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SS9018GBU
Detailed Description
RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
SS9018GBU Datasheet
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Technical Specifications
onsemi SS9018GBU RF BJT technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
72 @ 1mA, 5V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
1.1GHz
Power Max
400mW
Alternate Parts Comparison (SS9018GBU vs SS8050CTA vs SS30-TE-L-E vs SS9018HBU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Surface Mount | -- |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -30°C ~ 95°C (TA) | -- |
| Action |
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