onsemi SS9018HBU RF BJT
RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SS9018HBU
Detailed Description
RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
SS9018HBU Datasheet
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Technical Specifications
onsemi SS9018HBU RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
97 @ 1mA, 5V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
1.1GHz
Alternate Parts Comparison (SS9018HBU vs SS8050CTA vs SS30-TE-L-E vs SS9018GBU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | 20-WFQFN | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -30°C ~ 95°C (TA) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 1.5 A | -- | 50mA |
| Dc Current Gain Hfe Min IC Vce | 97 @ 1mA, 5V | 120 @ 100mA, 1V | -- | 72 @ 1mA, 5V |
| Power Max | 400mW | 1 W | -- | 400mW |
| Transistor Type | NPN | NPN | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 15V | 25 V | -- | 15V |
| Action |
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