onsemi 2N3663 RF BJT
RF Transistor NPN 12V 50mA 2.1GHz 350mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N3663
Detailed Description
RF Transistor NPN 12V 50mA 2.1GHz 350mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
2N3663 Datasheet
Quick Jump:
Technical Specifications
onsemi 2N3663 RF BJT technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Power Max
350mW
Dc Current Gain Hfe Min IC Vce
20 @ 8mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
2.1GHz
Alternate Parts Comparison (2N3663 vs MCH4021-TL-E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | 4-SMD, Flat Leads |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 150mA |
| Dc Current Gain Hfe Min IC Vce | 20 @ 8mA, 10V | 60 @ 50mA, 5V |
| Frequency Transition | 2.1GHz | 16GHz |
| Gain | 1.5dB | 17.5dB |
| Noise Figure Db Typ F | 6.5dB @ 60MHz | 1.2dB @ 1GHz |
| Power Max | 350mW | 400mW |
| Transistor Type | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 12V | 8V |
| Action |
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