onsemi MPSH11 RF BJT
RF Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MPSH11
Detailed Description
RF Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
MPSH11 Datasheet
Quick Jump:
Technical Specifications
onsemi MPSH11 RF BJT technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Frequency Transition
650MHz
Power Max
350mW
Alternate Parts Comparison (MPSH11 vs MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Dc Current Gain Hfe Min IC Vce | 60 @ 4mA, 10V | 25 @ 5mA, 10V | 25 @ 5mA, 10V | 60 @ 4mA, 10V |
| Frequency Transition | 650MHz | 800MHz | 800MHz | 650MHz |
| Power Max | 350mW | 350mW | 350mW | 350mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 25V | 15V | 15V | 25V |
| Action |
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