onsemi MJD3055T4G BJTs
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD3055T4G
Detailed Description
Reliable BJTs by onsemi, engineered for high-performance systems.
Package
DPAK
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
MJD3055T4G Datasheet
Quick Jump:
Technical Specifications
onsemi MJD3055T4G BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Packaging
Tape and Reel
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Production
Export Control Classification Number ECCN Code
EAR99
Introduction Date
1991-06-01
Manufacturer Lifecycle Status
ACTIVE
Package
DPAK
Weight
4.535924 g
Alternate Parts Comparison (MJD3055T4G vs MJD148T4G vs MJD210T4G vs MJD42CT4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55 °C ~ 150 °C | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| RoHS | Compliant | -- | -- | -- |
| Lifecycle Status | Production | -- | -- | -- |
| China ROHS | Non-Compliant | -- | -- | -- |
| Collector Base Voltage Vcbo | 70 V | -- | -- | -- |
| Collector Emitter Breakdown Voltage | 60 V | -- | -- | -- |
| Collector Emitter Saturation Voltage | 1.1 V | -- | -- | -- |
| Collector Emitter Voltage Vceo | 60 V | -- | -- | -- |
| Current Rating | 10 A | -- | -- | -- |
| Element Configuration | Single | -- | -- | -- |
| Emitter Base Voltage Vebo | 5 V | -- | -- | -- |
| Action |
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