onsemi BD180G BJTs
PNP BJT Transistor, 80V, 1A, 30W, TO-225
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD180G
Detailed Description
PNP BJT Transistor, 80V, 1A, 30W, TO-225
Package
TO-225AA, TO-126-3
Lifecycle Status
Obsolete
Datasheet
BD180G Datasheet
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Technical Specifications
onsemi BD180G BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
40 @ 150mA, 2V
Power Max
30 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (BD180G vs BD13716STU vs BD681G vs BD137)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Obsolete |
| Current Collector Cutoff Max | 1mA (ICBO) | 100nA (ICBO) | 500µA | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 1.5 A | 4 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 150mA, 2V | 100 @ 150mA, 2V | 750 @ 1.5A, 3V | 40 @ 150mA, 2V |
| Power Max | 30 W | 1.25 W | 40 W | 1.25 W |
| Transistor Type | PNP | NPN | NPN - Darlington | NPN |
| Vce Saturation Max Ib IC | 800mV @ 100mA, 1A | 500mV @ 50mA, 500mA | 2.5V @ 30mA, 1.5A | 500mV @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 60 V | 100 V | 60 V |
| Action |
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