onsemi MJE253G BJTs
PNP BJT 100V 4A TO-225 Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJE253G
Detailed Description
PNP BJT 100V 4A TO-225 Power Transistor
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
MJE253G Datasheet
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Technical Specifications
onsemi MJE253G BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 200mA, 1V
Power Max
1.5 W
Frequency Transition
40MHz
Transistor Type
PNP
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJE253G vs MJE340G vs MJE350G vs MJE13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector IC Max | 4 A | 500 mA | 500 mA | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 200mA, 1V | 30 @ 50mA, 10V | 30 @ 50mA, 10V | 8 @ 500mA, 2V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 1.5 W | 20 W | 20 W | 1.4 W |
| Transistor Type | PNP | NPN | PNP | NPN |
| Voltage Collector Emitter Breakdown Max | 100 V | 300 V | 300 V | 400 V |
| Current Collector Cutoff Max | 100nA (ICBO) | 100µA (ICBO) | 100µA (ICBO) | -- |
| Action |
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