onsemi MJE182G BJTs
3.0 A NPN Bipolar Power Transistor 80 V, TO-225, 500-BLKBX
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJE182G
Detailed Description
3.0 A NPN Bipolar Power Transistor 80 V, TO-225, 500-BLKBX
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
MJE182G Datasheet
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Technical Specifications
onsemi MJE182G BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
50 @ 100mA, 1V
Power Max
1.5 W
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (MJE182G vs MJE340G vs MJE350G vs MJE13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector IC Max | 3 A | 500 mA | 500 mA | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 50 @ 100mA, 1V | 30 @ 50mA, 10V | 30 @ 50mA, 10V | 8 @ 500mA, 2V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 1.5 W | 20 W | 20 W | 1.4 W |
| Transistor Type | NPN | NPN | PNP | NPN |
| Voltage Collector Emitter Breakdown Max | 80 V | 300 V | 300 V | 400 V |
| Current Collector Cutoff Max | 100nA (ICBO) | 100µA (ICBO) | 100µA (ICBO) | -- |
| Action |
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