onsemi BD13716STU BJTs
Bipolar Transistors - BJT NPN Epitaxial Sil
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD13716STU
Detailed Description
Bipolar Transistors - BJT NPN Epitaxial Sil
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
BD13716STU Datasheet
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Technical Specifications
onsemi BD13716STU BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 2V
Power Max
1.25 W
Transistor Type
NPN
Current Collector IC Max
1.5 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (BD13716STU vs BD681G vs BD137 vs MJE13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Obsolete |
| Current Collector IC Max | 1.5 A | 4 A | 1.5 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 2V | 750 @ 1.5A, 3V | 40 @ 150mA, 2V | 8 @ 500mA, 2V |
| Power Max | 1.25 W | 40 W | 1.25 W | 1.4 W |
| Transistor Type | NPN | NPN - Darlington | NPN | NPN |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | 2.5V @ 30mA, 1.5A | 500mV @ 50mA, 500mA | 3V @ 500mA, 1.5A |
| Voltage Collector Emitter Breakdown Max | 60 V | 100 V | 60 V | 400 V |
| Current Collector Cutoff Max | 100nA (ICBO) | 500µA | 100nA (ICBO) | -- |
| Action |
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