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onsemi MJE181STU BJTs

60V 3A NPN BJT Power Transistor, TO-126, 50MHz

1,158onsemiTO-225AA, TO-126-3$0.27
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Same model may have multiple batches, images only for reference.

MJE181STU
Manufacturer
Part Number (MPN)
MJE181STU
Detailed Description
60V 3A NPN BJT Power Transistor, TO-126, 50MHz
Package
TO-225AA, TO-126-3
Lifecycle Status
Obsolete
Datasheet
PDF MJE181STU Datasheet
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Technical Specifications

onsemi MJE181STU BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
50 @ 100mA, 1V
Power Max
1.5 W
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
60 V

Alternate Parts Comparison (MJE181STU vs MJE340G vs MJE350G vs MJE13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveObsolete
Current Collector IC Max3 A500 mA500 mA1.5 A
Dc Current Gain Hfe Min IC Vce50 @ 100mA, 1V30 @ 50mA, 10V30 @ 50mA, 10V8 @ 500mA, 2V
Description--------
Detailed Description--------
Power Max1.5 W20 W20 W1.4 W
Transistor TypeNPNNPNPNPNPN
Voltage Collector Emitter Breakdown Max60 V300 V300 V400 V
Current Collector Cutoff Max100µA (ICBO)100µA (ICBO)100µA (ICBO)--
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