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onsemi MJE340G BJTs

NPN BJT 300V 500mA TO-225 Power Transistor

2,162 ActiveonsemiTO-225AA, TO-126-3$0.94
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Same model may have multiple batches, images only for reference.

MJE340G
Manufacturer
Part Number (MPN)
MJE340G
Detailed Description
NPN BJT 300V 500mA TO-225 Power Transistor
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
PDF MJE340G Datasheet
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Technical Specifications

onsemi MJE340G BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
20 W
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
300 V
Current Collector Cutoff Max
100µA (ICBO)

Alternate Parts Comparison (MJE340G vs MJE13003 vs MJE253G vs MJE182G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Collector IC Max500 mA1.5 A4 A3 A
Dc Current Gain Hfe Min IC Vce30 @ 50mA, 10V8 @ 500mA, 2V40 @ 200mA, 1V50 @ 100mA, 1V
Description--------
Detailed Description--------
Power Max20 W1.4 W1.5 W1.5 W
Transistor TypeNPNNPNPNPNPN
Voltage Collector Emitter Breakdown Max300 V400 V100 V80 V
Current Collector Cutoff Max100µA (ICBO)--100nA (ICBO)100nA (ICBO)
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