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onsemi BD140G BJTs

1.5 A, 80 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX

105,000 ActiveonsemiTO-225$0.83
BD140G - No Image Available

Same model may have multiple batches, images only for reference.

BD140G
Manufacturer
Part Number (MPN)
BD140G
Detailed Description
1.5 A, 80 V PNP Bipolar Power Transistor, TO-225, 500-BLKBX
Package
TO-225
Lifecycle Status
Active
Datasheet
PDF BD140G Datasheet
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Technical Specifications

onsemi BD140G BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
40 @ 150mA, 2V
Power Max
1.25 W
Transistor Type
PNP
Current Collector IC Max
1.5 A
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (BD140G vs BD439G vs BD787G vs BD237G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)100µA (ICBO)100µA100µA (ICBO)
Current Collector IC Max1.5 A4 A4 A2 A
Dc Current Gain Hfe Min IC Vce40 @ 150mA, 2V40 @ 500mA, 1V40 @ 200mA, 3V25 @ 1A, 2V
Description--------
Detailed Description--------
Power Max1.25 W36 W15 W25 W
Transistor TypePNPNPNNPNNPN
Vce Saturation Max Ib IC500mV @ 50mA, 500mA800mV @ 300mA, 3A2.5V @ 800mA, 4A600mV @ 100mA, 1A
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