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onsemi MJE243G BJTs

NPN BJT 100V 4A 15W TO-225 Transistor

2,006 ActiveonsemiTO-225AA, TO-126-3$0.64
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Same model may have multiple batches, images only for reference.

MJE243G
Manufacturer
Part Number (MPN)
MJE243G
Detailed Description
NPN BJT 100V 4A 15W TO-225 Transistor
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
PDF MJE243G Datasheet
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Technical Specifications

onsemi MJE243G BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 200mA, 1V
Power Max
1.5 W
Frequency Transition
40MHz
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
100 V

Alternate Parts Comparison (MJE243G vs MJE340G vs MJE350G vs MJE13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Collector IC Max4 A500 mA500 mA1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 200mA, 1V30 @ 50mA, 10V30 @ 50mA, 10V8 @ 500mA, 2V
Description--------
Detailed Description--------
Power Max1.5 W20 W20 W1.4 W
Transistor TypeNPNNPNPNPNPN
Voltage Collector Emitter Breakdown Max100 V300 V300 V400 V
Current Collector Cutoff Max100nA (ICBO)100µA (ICBO)100µA (ICBO)--
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