Nexperia PSMN7R6-60PS MOSFETs
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 92A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN7R6-60PS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN7R6-60PS vs PSMN7R6-60BS,118 vs PSMN050-80PS vs PSMN2R2-40PS,127)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 3 |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single |
| Jedec | TO-220AB | -- | TO-220AB | TO-220AB |
| Maximum Continuous Drain Current | 92A | -- | 22A | 100A |
| Action |
Nexperia PSMN7R6-60PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 92A continuous drain current. This single element transistor offers a low 7.8mΩ drain-source resistance at 10V gate-source voltage. Encased in a TO-220AB package with through-hole mounting, it supports a maximum power dissipation of 149W and operates across a wide temperature range of -55°C to 175°C.
Key electrical characteristics include a typical gate charge of 38.7nC and input capacitance of 2651pF.
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PSMN7R6-60BS,118NexperiaPSMN2R2-40PS,127NexperiaPSMN5R0-80PS,127NexperiaPSMN4R3-30PL,127Nexperia