Nexperia PSMN7R0-100PS MOSFETs
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN7R0-100PS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN7R0-100PS vs PSMN7R0-30MLC,115 vs PSMN7R0-30YL,115 vs PSMN7R0-60YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 3 | -- | -- | 5 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single | -- | -- | Single Triple Source |
| Jedec | TO-220AB | -- | -- | MO-235 |
| Action |
Nexperia PSMN7R0-100PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 100A continuous drain current. This single-element transistor is housed in a TO-220AB package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum gate-source voltage of 20V, a maximum drain-source on-resistance of 6.8 mOhm at 10V, and a maximum power dissipation of 269W.
Operating temperature range spans from -55°C to 175°C.
More Parts in MOSFETs
PSMN7R0-100PS,127NexperiaPSMN7R0-30MLC,115Nexperia