Nexperia PSMN5R0-100XS MOSFETs
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 67.5A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN5R0-100XS
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 67.5A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting type. Key specifications include a low 5mOhm drain-source resistance at 10V, a typical gate charge of 153nC at 10V, and a maximum power dissipation of 63.8W. Operating temperature range spans from -55°C to 175°C.
Package
TO-220F
Key Features
Package: TO-220F
Lifecycle Status
Active
Datasheet
PSMN5R0-100XS Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN5R0-100XS MOSFETs technical specifications.
General
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220F
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.6(Max)
Package Height Mm
15.8(Max)
Jedec
TO-220-F
Alternate Parts Comparison (PSMN5R0-100XS vs PSMN5R0-80PS,127 vs PSMN5R0-100XS,127 vs PSMN026-80YS,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 5 |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single Triple Source |
| Jedec | TO-220-F | TO-220AB | TO-220-F | MO-235 |
| Maximum Continuous Drain Current | 67.5A | 100A | 67.5A | 34A |
| Action |
Nexperia PSMN5R0-100XS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 67.5A continuous drain current. This single-element transistor is housed in a TO-220F package with a through-hole mounting type. Key specifications include a low 5mOhm drain-source resistance at 10V, a typical gate charge of 153nC at 10V, and a maximum power dissipation of 63.8W.
Operating temperature range spans from -55°C to 175°C.
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