Nexperia PSMN4R5-40PS,127 MOSFETs
N-channel Power MOSFET featuring a 40V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN4R5-40PS,127 MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN4R5-40PS,127 vs PSMN4R5-30YLC,115 vs PSMN4R5-40BS,118 vs PSMN2R2-40PS,127)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 3 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single |
| Maximum Continuous Drain Current | 100A | -- | 100A | 100A |
| Action |
Nexperia PSMN4R5-40PS,127 MOSFETs Overview
N-channel Power MOSFET featuring a 40V drain-source voltage and 100A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-220AB package with through-hole mounting. Key specifications include a maximum drain-source on-resistance of 4.6 mOhm at 10V, a typical gate charge of 42.3 nC at 10V, and a typical input capacitance of 2683 pF at 12V.
Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 148W.
More Parts in MOSFETs
PSMN2R2-40PS,127NexperiaPSMN5R0-80PS,127Nexperia