Nexperia PSMN4R4-80PS,127 MOSFETs
N-channel Power MOSFET, 80V drain-source voltage, 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN4R4-80PS,127
Base Model
Detailed Description
N-channel Power MOSFET, 80V drain-source voltage, 100A continuous drain current. Features low 4.1mΩ drain-source resistance at 10V, 125nC typical gate charge, and 8400pF input capacitance. Housed in a TO-220AB package with through-hole mounting, this single-element TMOS process MOSFET offers a maximum power dissipation of 306W and operates from -55°C to 175°C.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN4R4-80PS,127 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN4R4-80PS,127 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)
Alternate Parts Comparison (PSMN4R4-80PS,127 vs PSMN4R4-30MLC,115 vs PSMN4R4-80BS,118 vs PSMN2R2-40PS,127)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 3 | -- | -- | 3 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single | -- | -- | Single |
| Jedec | TO-220AB | -- | -- | TO-220AB |
| Action |
Nexperia PSMN4R4-80PS,127 MOSFETs Overview
N-channel Power MOSFET, 80V drain-source voltage, 100A continuous drain current. Features low 4.1mΩ drain-source resistance at 10V, 125nC typical gate charge, and 8400pF input capacitance. Housed in a TO-220AB package with through-hole mounting, this single-element TMOS process MOSFET offers a maximum power dissipation of 306W and operates from -55°C to 175°C.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN2R2-40PS,127NexperiaN-channel Power MOSFET with 40V drain-source voltage and 100A continuous drain current.
PSMN5R0-80PS,127NexperiaN-channel Power MOSFET featuring 80V drain-source voltage and 100A continuous drain current.