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Microsemi TAN300 RF BJT

TAN300 by Microsemi · RF BJT · 55KT

In StockMicrosemi55KT
TAN300 55KT package illustration

Same model may have multiple batches, images only for reference.

TAN300
Manufacturer
Part Number (MPN)
TAN300
Package
55KT
Lifecycle Status
Obsolete
Datasheet
PDF TAN300 Datasheet
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Technical Specifications

Microsemi TAN300 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
20 A
Dc Current Gain Hfe Min IC Vce
10 @ 1mA, 5V
Frequency Transition
960MHz ~ 1.215GHz
Gain
6.6dB
Power Max
1166 W
Transistor Type
NPN

Related Parts Comparison (TAN300 vs TAN15 vs TAN250A vs TAN500)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBulkBulkBulkBulk
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max20 A2 A30 A50 A
Frequency Transition960MHz ~ 1.215GHz960MHz ~ 1.215GHz960MHz ~ 1.215GHz960MHz ~ 1.215GHz
Gain6.6dB7dB ~ 8dB6.2db ~ 7dB9dB
Power Max1166 W175 W575 W2500 W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V50 V60 V75 V
Dc Current Gain Hfe Min IC Vce10 @ 1mA, 5V--10 @ 1A, 5V20 @ 1A, 5V
Number of Pins--333
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