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Microsemi 1214-110M RF BJT

1214-110M by Microsemi · RF BJT · 55KT

In StockMicrosemi55KT
1214-110M 55KT package illustration

Same model may have multiple batches, images only for reference.

1214-110M
Manufacturer
Part Number (MPN)
1214-110M
Package
55KT
Lifecycle Status
Obsolete
Datasheet
PDF 1214-110M Datasheet
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Technical Specifications

Microsemi 1214-110M RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
8 A
Frequency Transition
1.2GHz ~ 1.4GHz
Gain
7.4dB
Power Max
270 W
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
75 V

Alternate Parts Comparison (1214-110M vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeChassis MountChassis MountChassis MountSurface Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max8 A250mA5A30A
Frequency Transition1.2GHz ~ 1.4GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain7.4dB9dB7.6dB17dB
Power Max270 W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max75 V45V35V15V
Dc Current Gain Hfe Min IC Vce--0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
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