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Microsemi MDS400 RF BJT

MDS400 by Microsemi · RF BJT · 55KT

In StockMicrosemi55KT
MDS400 55KT package illustration

Same model may have multiple batches, images only for reference.

MDS400
Manufacturer
Part Number (MPN)
MDS400
Package
55KT
Lifecycle Status
Obsolete
Datasheet
PDF MDS400 Datasheet
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Technical Specifications

Microsemi MDS400 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V
Frequency Transition
1.03GHz ~ 1.09GHz
Gain
6.5dB
Power Max
1450 W
Transistor Type
NPN

Alternate Parts Comparison (MDS400 vs MDS800 vs MDS500L vs MDS1100)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeChassis Mount--Chassis MountSurface Mount
Operating Temperature200°C (TJ)--200°C (TJ)200°C (TJ)
Lifecycle StatusObsolete--ObsoleteObsolete
Current Collector IC Max40 A--24A100 A
Dc Current Gain Hfe Min IC Vce10 @ 1A, 5V--20 @ 1A, 5V20 @ 5A, 5V
Frequency Transition1.03GHz ~ 1.09GHz--1.03GHz ~ 1.09GHz1.03 GHz
Gain6.5dB--9.2dB8.9dB
Power Max1450 W--833W8750 W
Transistor TypeNPN--NPNNPN
Voltage Collector Emitter Breakdown Max55 V--70V65 V
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