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Microsemi DME500 RF BJT

DME500 by Microsemi · RF BJT · 55KT

In StockMicrosemi55KT
DME500 55KT package illustration

Same model may have multiple batches, images only for reference.

DME500
Manufacturer
Part Number (MPN)
DME500
Package
55KT
Lifecycle Status
Obsolete
Datasheet
PDF DME500 Datasheet
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Technical Specifications

Microsemi DME500 RF BJT technical specifications.

General

RoHS
Compliant
Number of Pins
3
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
55 V
Collector Emitter Voltage Vceo
55 V
Current Collector IC Max
40 A
Dc Current Gain Hfe Min IC Vce
10 @ 500mA, 5V

Alternate Parts Comparison (DME500 vs DME375A vs DME400A vs DME800)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSCompliantYesYes--
Package / CaseBulk----Bulk
Mounting TypeChassis Mount----Chassis Mount
Operating Temperature200°C (TJ)----200°C (TJ)
Lifecycle StatusObsolete----Obsolete
Current Collector IC Max40 A----50 A
Dc Current Gain Hfe Min IC Vce10 @ 500mA, 5V----20 @ 600mA, 5V
Frequency Transition1.025GHz ~ 1.15GHz----1.025GHz ~ 1.15GHz
Gain6dB ~ 6.5dB----9dB ~ 10dB
Power Max1700 W----2500 W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max55 V----65 V
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