Microsemi JTDB25 RF BJT
JTDB25 by Microsemi · RF BJT · Case 55AW-1-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JTDB25
Package
Case 55AW-1-3
Lifecycle Status
Active
Datasheet
JTDB25 Datasheet
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Technical Specifications
Microsemi JTDB25 RF BJT technical specifications.
General
RoHS
Yes
Feature Type
NPN
Feature Configuration
Single
Feature Number of Elements Per Chip
1
Feature Maximum Collector Emitter Voltage V
55
Feature Maximum Emitter Base Voltage V
3.5
Feature Maximum Dc Collector Current a
5
Feature Minimum Dc Current Gain
20@500mA@5V
Feature Minimum Dc Current Gain Range
2 to 30
Feature Maximum Junction Case Thermal Resistance
1.8°C/W
Related Parts Comparison (JTDB25 vs JTDB75 vs MS2201 vs SD1224)
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Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | Case 55AW-1-3 | -- | M220 | -- |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Configuration | Single | -- | -- | -- |
| Feature Maximum Collector Emitter Voltage V | 55 | -- | -- | -- |
| Feature Maximum Dc Collector Current a | 5 | -- | -- | -- |
| Feature Maximum Emitter Base Voltage V | 3.5 | -- | -- | -- |
| Feature Maximum Junction Case Thermal Resistance | 1.8°C/W | -- | -- | -- |
| Feature Maximum Power Dissipation Mw | 97000 | -- | -- | -- |
| Feature Military | No | -- | -- | -- |
| Action |
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