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Microsemi JAN2N2857 RF BJT

JAN2N2857 by Microsemi · RF BJT · TO-72-3MetalCan

In StockMicrosemiTO-72-3MetalCan
JAN2N2857 TO-72-3MetalCan package illustration

Same model may have multiple batches, images only for reference.

JAN2N2857
Manufacturer
Part Number (MPN)
JAN2N2857
Package
TO-72-3MetalCan
Lifecycle Status
Obsolete
Datasheet
PDF JAN2N2857 Datasheet
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Technical Specifications

Microsemi JAN2N2857 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
500MHz
Noise Figure Db Typ F
4.5dB @ 450MHz
Gain
12.5dB ~ 21dB @ 450MHz
Power Max
200mW

Alternate Parts Comparison (JAN2N2857 vs JAN2N2857UB vs JAN2N4957 vs JANTX2N2857UB)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleSurface MountThrough Hole--
Operating Temperature-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)--
RoHSYes--YesYes
Lifecycle StatusObsoleteObsoleteObsolete--
Current Collector IC Max40mA40 mA30mA--
Dc Current Gain Hfe Min IC Vce30 @ 3mA, 1V30 @ 3mA, 1V30 @ 5mA, 10V--
Gain12.5dB ~ 21dB @ 450MHz21dB25dB--
Noise Figure Db Typ F4.5dB @ 450MHz4.5dB @ 450MHz3.5dB @ 450MHz--
PackageTO-72-3MetalCan--TO-72-3MetalCanCase UB-4
Power Max200mW200 mW200mW--
Transistor TypeNPNNPNPNP--
Voltage Collector Emitter Breakdown Max15V15 V30V--
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