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Microsemi DME375A RF BJT

DME375A by Microsemi · RF BJT · Case 55AW-1-3

In Stock ActiveMicrosemiCase 55AW-1-3
DME375A Case 55AW-1-3 package illustration

Same model may have multiple batches, images only for reference.

DME375A
Manufacturer
Part Number (MPN)
DME375A
Package
Case 55AW-1-3
Lifecycle Status
Active
Datasheet
PDF DME375A Datasheet
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Technical Specifications

Microsemi DME375A RF BJT technical specifications.

General

RoHS
Yes
Feature Type
NPN
Feature Configuration
Single
Feature Number of Elements Per Chip
1
Feature Maximum Collector Emitter Voltage V
55
Feature Maximum Emitter Base Voltage V
4
Feature Maximum Dc Collector Current a
30
Feature Minimum Dc Current Gain
10@300mA@5V
Feature Minimum Dc Current Gain Range
2 to 30
Feature Maximum Junction Case Thermal Resistance
0.2°C/W

Alternate Parts Comparison (DME375A vs DME800 vs DME500 vs DME400A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYes--CompliantYes
PackageCase 55AW-1-3----Case 55AW-1-3
Feature AEC QualifiedNo------
Feature Auto MotiveNo------
Feature Cecc QualifiedNo------
Feature ConfigurationSingle------
Feature Maximum Collector Emitter Voltage V55------
Feature Maximum Dc Collector Current a30------
Feature Maximum Emitter Base Voltage V4------
Feature Maximum Junction Case Thermal Resistance0.2°C/W------
Feature Maximum Power Dissipation Mw875000------
Feature Maximum Transition Frequency Mhz1150------
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