Microsemi DME375A RF BJT
DME375A by Microsemi · RF BJT · Case 55AW-1-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DME375A
Package
Case 55AW-1-3
Lifecycle Status
Active
Datasheet
DME375A Datasheet
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Technical Specifications
Microsemi DME375A RF BJT technical specifications.
General
RoHS
Yes
Feature Type
NPN
Feature Configuration
Single
Feature Number of Elements Per Chip
1
Feature Maximum Collector Emitter Voltage V
55
Feature Maximum Emitter Base Voltage V
4
Feature Maximum Dc Collector Current a
30
Feature Minimum Dc Current Gain
10@300mA@5V
Feature Minimum Dc Current Gain Range
2 to 30
Feature Maximum Junction Case Thermal Resistance
0.2°C/W
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Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | -- | Compliant | Yes |
| Package | Case 55AW-1-3 | -- | -- | Case 55AW-1-3 |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Configuration | Single | -- | -- | -- |
| Feature Maximum Collector Emitter Voltage V | 55 | -- | -- | -- |
| Feature Maximum Dc Collector Current a | 30 | -- | -- | -- |
| Feature Maximum Emitter Base Voltage V | 4 | -- | -- | -- |
| Feature Maximum Junction Case Thermal Resistance | 0.2°C/W | -- | -- | -- |
| Feature Maximum Power Dissipation Mw | 875000 | -- | -- | -- |
| Feature Maximum Transition Frequency Mhz | 1150 | -- | -- | -- |
| Action |
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