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Microsemi DME800 RF BJT

DME800 by Microsemi · RF BJT · 55ST-1

In StockMicrosemi55ST-1
DME800 55ST-1 package illustration

Same model may have multiple batches, images only for reference.

DME800
Manufacturer
Part Number (MPN)
DME800
Package
55ST-1
Lifecycle Status
Obsolete
Datasheet
PDF DME800 Datasheet
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Technical Specifications

Microsemi DME800 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 A
Dc Current Gain Hfe Min IC Vce
20 @ 600mA, 5V
Frequency Transition
1.025GHz ~ 1.15GHz
Gain
9dB ~ 10dB
Power Max
2500 W
Transistor Type
NPN

Alternate Parts Comparison (DME800 vs DME375A vs DME400A vs DME500)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulk----Bulk
Mounting TypeChassis Mount----Chassis Mount
Operating Temperature200°C (TJ)----200°C (TJ)
Lifecycle StatusObsolete----Obsolete
Current Collector IC Max50 A----40 A
Dc Current Gain Hfe Min IC Vce20 @ 600mA, 5V----10 @ 500mA, 5V
Frequency Transition1.025GHz ~ 1.15GHz----1.025GHz ~ 1.15GHz
Gain9dB ~ 10dB----6dB ~ 6.5dB
Power Max2500 W----1700 W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max65 V----55 V
Package--Case 55AW-1-3Case 55AW-1-3--
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