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Microsemi DME800 RF BJT

DME800 by Microsemi · RF BJT · 55ST-1

In StockMicrosemi55ST-1
DME800 55ST-1 package illustration

Same model may have multiple batches, images only for reference.

DME800
Manufacturer
Part Number (MPN)
DME800
Package
55ST-1
Lifecycle Status
Obsolete
Datasheet
PDF DME800 Datasheet
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Technical Specifications

Microsemi DME800 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 A
Dc Current Gain Hfe Min IC Vce
20 @ 600mA, 5V
Frequency Transition
1.025GHz ~ 1.15GHz
Gain
9dB ~ 10dB
Power Max
2500 W
Transistor Type
NPN

Related Parts Comparison (DME800 vs DME375A vs DME400A vs DME500)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBulk----Bulk
Mounting TypeChassis Mount----Chassis Mount
Operating Temperature200°C (TJ)----200°C (TJ)
Lifecycle StatusObsolete----Obsolete
Current Collector IC Max50 A----40 A
Dc Current Gain Hfe Min IC Vce20 @ 600mA, 5V----10 @ 500mA, 5V
Frequency Transition1.025GHz ~ 1.15GHz----1.025GHz ~ 1.15GHz
Gain9dB ~ 10dB----6dB ~ 6.5dB
Power Max2500 W----1700 W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max65 V----55 V
Package--Case 55AW-1-3Case 55AW-1-3--
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