Diodes Incorporated BSS138DWQ-13 MOSFETs
MOSFET 2N-CH 50V 0.2A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS138DWQ-13
Base Model
Detailed Description
MOSFET 2N-CH 50V 0.2A SOT363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
BSS138DWQ-13 Datasheet
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Technical Specifications
Diodes Incorporated BSS138DWQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 50°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
3.5 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (BSS138DWQ-13 vs BSS138DWQ-7 vs BSS8402DW-7-F vs BSS84DWQ-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 200 mA | 200 mA | 115 mA, 130 mA | 130 mA |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | TSSOP-6 |
| Pd Power Dissipation | 200 mW | 200 mW | 200 mW | 300 mW |
| Rds on Drain Source Resistance | 3.5 Ohms | 3.5 Ohms | 7.5 Ohms, 10 Ohms | 10 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel, P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | 50 V | 60 V, 50 V | 50 V |
| Vgs Gate Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | - 20 V, + 20 V | - 20 V, + 20 V |
| Action |
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